, u na, 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 rfl1n18l, rfl1n20l, rfp2n18l, rfp2n20l n-channel logic level power field-effect transistors (l2 fet) 1 and 2 a. 180v and 200v rem: 3,5 fl and 3,65 0 features: ? design optimized lor 5 volt gale drive ? can {>8 driven directly from q-mos, n-mos, ttl circuits ? compatible with automotive drive requirements ? soa is power-dissipation limited ? nanosecond switching speeds ? linear transfer characteristics ? high input impedance ? jwa/or/fy carrier device n-channel enhancement mode terminal designations the rfl1n18l and rfl1n20l and the rfp2n18l and rfp2n20l are n-channel enhancement-mode silicon-gate power, field-effect transistors specifically designed for use with logic level (5 volt) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. this performance is accomplished through a special gate oxide design which provides full rated con- duction at gate biases in the 3-5 volt range, thereby facilitat- ing true on-off power control directly from logic circuit supply voltages. the rfl-series types are supplied in the jedec to-205af metal package and the rfp-saries types in the jedec to- 220a8 plastic package. rfl1n18l rfl1n20l jedec to-205af rfp2n18l rfp2n20l jedec to-220ab maximum ratings, absolute-maximum values (te=25 c): rfl1n18l rfl1n20u drain-source voltage vom 180 200 drain-gate voltage (fv"1 mo) .... vocb 180 200 gate-source voltage v0? ? drain current, rms continuous i0 1 1 pulsed lou power dissipation @ te=25 c pi 8.33 8.33 derate above t0=25*c 0.0667 0.0667 operating and storage temperature t,. t,,, 10 -55 to *150 rfp2n18l 180 180 2 25 0.2 rfpsn20l 200 200 2 25 0.2 v v v a a w wrc nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
rfl1n18l, rfl1n20l, rfp2n18l, rfp2n20l electrical characteristics, al case temperature (tc)=2$c unless otherwise specified. characteristic drain-source breakdown voltage gate threshold voltage " zero gate voltage drain current gate-source leakage current drain-source on voltage static drain-source on resistance forward transconductance input capacitance output capacitance reverse-transfer capacitance turn-on delay time rise time turn-off delay time fall time thermal resistance junction-lo-case symbol bvoos v0,(th) loss loss voslon)' ros(on)' 9..' c,? c? c? won) t, td(off) t, r0? test conditions idc1 ma vq3=0 vas=vra i0=1 ma vm=145v vm=160v tc=125c vos=145v vos=160v vos=10v vds-0 id=1 a vos=5 v i0=2a vos=5 v b=1 a vos=5 v vp8=10 v lo=1 a vds=25 v vos=0 v f=1mhz v00=moov b-1 a r,.n= r01>$.2s 0 vqs=5v rfl1n18l, rfl1n20l rfp2n18l. rfp2n20l rfp rfl rfp rfl rfp rfl tol-t4 rfl limits rfl1n18l rfp2n18l min. 160 1 - ? ? ? ? ? ? ? 800 ? ? ? 10(typ) 10(typ) 25(lyp) 20(typ) 30(typ> ? ? max. ? 2 1 50 100 3.5 3.65 9 9.3 3.5 3.65 - 200 60 20 25 30 40 25 50 15 5 rfl1nzol rfp2n20l min. 200 1 - ? ? ? ? ? ? ? 800 ? ? ? 10(typ) 10(typ) 25(typ) 20(typ) 30(typ; ? ? max. ? 2 1 50 100 3.5 3.65 9 9.3 3.5 3.65 - 200 60 20 25 30 40 25 50 15 5 units v v /-a na v n mmho pf ns c/w ?pulsed: pulse duration ? 300 ^s max., duty cycle ? 2%. source-drain diode ratings and characteristics characteristic diode forward voltage reverse recovery time symbol vsd !? test conditions lso=1 a lf-2a dif/d,=60 m/js limits rfl1n18l rfp2n18l min. _ max. 1.4 200{typ) rfl1n20l rfp2n20l min. _ max. 1,4 200(typ) units v ns ?pulse test: width < 300//s, duty cycle < 2%.
|
